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991.
992.
为了获得高质量光学表面的碳化硅反射镜,利用射频磁控溅射方法,在直径70 mm的RB-SiC基片上沉积了厚约100 μm的Si改性涂层,对改性层进行超光滑加工,并对改性层的表面形貌及性能进行了测试。ZYGO表面粗糙度仪测试结果表明,抛光后Si改性涂层表面粗糙度均方根值达到了0.496 nm;X射线衍射仪测试显示,制备Si改性涂层为多晶结构;使用拉力机做附着力测试,结果表明膜基附着力大于10.7 MPa。证明采用磁控溅射技术制备的Si改性涂层均匀、致密、附着力好,能够满足RB-SiC材料表面改性要求。 相似文献
993.
离子束反应溅射沉积SiO2薄膜的光学特性 总被引:1,自引:0,他引:1
主要研究采用离子束反应溅射(RIBS)制备SiO2薄膜的折射率、消光系数、化学计量比与氧气在氩氧混合工作气体中含量及其沉积速率的关系。研究结果表明:RIBS制备的SiO2薄膜在0.63 μm处折射率n= 1.48,消光系数小于10-5;随着沉积速率的增加,薄膜的折射率和消光系数随之变大,当沉积速率超过0.3 nm/s,即使是在纯氧环境溅射,折射率值也不低于1.5;通过对红外透射光谱的主吸收峰位置研究得到沉积的SiO2薄膜为缺氧型,化学计量比不超过1.8,且红外吸收峰位置和SiO2折射率存在对应关系,因此在不加热衬底情况下使用RIBS制备SiO2薄膜时,会限制沉积速率的提高。 相似文献
994.
995.
为了使光学仪器能适应低温潮湿环境,设计了一种复合型的保护玻璃防水雾透明导电薄膜.采用非平衡闭合磁场反应溅射技术在K9玻璃基底上沉积了氧化铟锡(ITO)导电膜以及复合型的透明导电膜系.采用光谱仪、方阻仪测试了样品的透射光谱以及方块电阻,并对样品进行了环境试验.结果表明,样品的光学技术指标以及抗恶劣环境性能均达到了使用要求... 相似文献
996.
Uniformly distributed polycrystalline indium nanohillocks are synthesized on silicon substrates with Au catalyst by using the radio frequency magnetic sputtering technique. The results show that the Au catalyst plays a key role in the formation of indium nanohillocks. After thermally oxidizing the indium nanohillocks at 500 ℃ in air for 5 h, the indium nanohillocks totally transform into In2O3 nanohillocks. The energy-dispersive X-ray spectroscopy result indicates that many oxygen vacancies and oxygen-indium vacancy pairs exist in the In2O3 nanohillocks. Photoluminescence spectra under an Ne laser excitation at 280 nm show broad emissions at 420 nm and 470 nm with a shoulder at 450 nm related to oxygen vacancies and oxygen-indium vacancies at room temperature. 相似文献
997.
通过磁控溅射并引入钛保护层, 利用在0.3 mol·L-1硫酸中20 V电压下二次阳极氧化, 在氧化铟锡(ITO)导电玻璃衬底上直接制备了超薄(约140 nm, 为阳极氧化前Al厚度的一半)、大面积(约4 cm2)的多孔阳极氧化铝(AAO). 扫描电子显微镜结果表明生成的微孔与衬底垂直, 孔径和孔间距分别约为30和60 nm. 我们发现钛保护层的作用是提高了Al层的附着性并且防止ITO被腐蚀, 在此体系中钛不能被其它的金属如铬、金、银或铜代替. 紫外-可见光谱透过率结果显示在阳极氧化过程中Ti被氧化成为透明的TiO2, 利用10-20 nm的钛保护层以及二次阳极氧化过程, 能够保证高透明度. 在ITO上直接制备的这种透明、有序的AAO纳米结构在光子学、光伏领域和纳米制备等方面具有潜在应用. 相似文献
998.
《Current Applied Physics》2014,14(6):850-855
Transparent and conductive thin films of fluorine doped zinc tin oxide (FZTO) were deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. The effect of annealing temperature on the structural, electrical and optical performances of FZTO thin films has been studied. FZTO thin film annealed at 600 °C shows the decrease in resistivity 5.47 × 10−3 Ω cm, carrier concentration ∼1019 cm−3, mobility ∼20 cm2 V−1 s−1 and an increase in optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures which is well explained by Burstein–Moss effect. The optical transmittance of FZTO films was higher than 80% in all specimens. Work function (ϕ) of the FZTO films increase from 3.80 eV to 4.10 eV through annealing and are largely dependent on the amounts of incorporated F. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics. 相似文献
999.
Shuyao Chen 《中国物理 B》2022,31(4):48503-048503
Yttrium iron garnet (YIG) films possessing both perpendicular magnetic anisotropy (PMA) and low damping would serve as ideal candidates for high-speed energy-efficient spintronic and magnonic devices. However, it is still challenging to achieve PMA in YIG films thicker than 20 nm, which is a major bottleneck for their development. In this work, we demonstrate that this problem can be solved by using substrates with moderate lattice mismatch with YIG so as to suppress the excessive strain-induced stress release as increasing the YIG thickness. After carefully optimizing the growth and annealing conditions, we have achieved out-of-plane spontaneous magnetization in YIG films grown on sGGG substrates, even when they are as thick as 50 nm. Furthermore, ferromagnetic resonance and spin pumping induced inverse spin Hall effect measurements further verify the good spin transparency at the surface of our YIG films. 相似文献
1000.
Structure,phase evolution and properties of Ta films deposited using hybrid high-power pulsed and DC magnetron co-sputtering 下载免费PDF全文
Crystalline phase and microstructure control are critical for obtaining desired properties of Ta films deposited by magnetron sputtering. Structure, phase evolution and properties of Ta films deposited by using hybrid high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) under different fractions of DCMS power were investigated, where Ta ion to Ta neutral ratios of the deposition flux were changed. The results revealed that the number of Ta ions arriving on the substrate/growing film plays an important role in structure and phase evolution of Ta films. It can effectively avoid the unstable arc discharge under low pressure and show a higher deposition rate by combining HiPIMS and DCMS compared with only HiPIMS. Meanwhile, the high hardness α -Ta films can be directly deposited by hybrid co-sputtering compared to those prepared by DCMS. In the co-sputtering technology, pure α -Ta phase films with extremely fine, dense and uniform crystal grains were obtained, which showed smooth surface roughness (3.22 nm), low resistivity (38.98 μΩ · cm) and abnormal high hardness (17.64 GPa). 相似文献